smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SD2226K features high dc current gain. high emitter-base voltage. low saturation voltage. electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =10a 60 v collector-emitter breakdown voltage bv ceo i c =1ma 50 v emitter-base breakdown voltage bv ebo i e =10a 12 v collector cutoff current i cbo v cb =50v 0.3 a emitter cutoff current i ebo v eb =12v 0.3 a collector-emitter saturation voltage * v ce(sat) i c /i b =50ma/5ma 0.3 v dc current transfer ratio * h fe v ce =5v, i c =1ma 820 2700 output capacitance * f t v ce =5v, i e = -10ma, f=100mhz 250 mhz transition frequency c ob v cb =5v, i e =0, f=1mhz 3.5 pf * measured using pulse current. h fe classification marking rank v w h fe 820 1800 1200 2700 bj absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 12 v 0.15 0.2 * collector power dissipation p c 0.2 w junction temperature tj 150 storage temperature t stg -55to+150 * single pulse pw=100ms. collector current i c a sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type smd type smd type ic smd type smd type ic smd type smd type smd type ic smd type smd type smd type product specification 4008-318-123
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